Document Details

Document Type : Article In Journal 
Document Title :
A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method
A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method
 
Subject : physics 
Document Language : English 
Abstract : A novel aluminum iron oxide (Al/AlFe2O4/p-Si) Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite (AlFe2O4) was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor (n) and barrier height (Phi(B0)) of the photodiode. The values of n and Phi(B0) for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance (R-s) are determined using Cheung's method and Ohm's law. The values of Rs and shunt resistance (R-sh) are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future 
ISSN : 1674-1056 
Journal Name : CHINESE PHYSICS B 
Volume : 23 
Issue Number : 5 
Publishing Year : 1435 AH
2014 AD 
Article Type : Article 
Added Date : Wednesday, August 2, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
A TatarogluTataroglu, A InvestigatorDoctorate 
A.A HendiHendi, A.A ResearcherDoctorate 
A.A Al OrainyAl Orainy, A.A ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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